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Jun. 2016. Rev. 3.0

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SW35N10V

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

100

V

I

D

Continuous drain current (@T

35*

A

Continuous drain current (@T

22*

A

I

DM

Drain current pulsed

(note 1)

140

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

392

mJ

E

AR

Repetitive avalanche energy

(note 1)

22

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

1.45

W

0.01

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient

86

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW HA 35N10V

SW35N10V

DFN5x6

REEL

N-channel Enhanced mode DFN5*6 MOSFET

Features

 High ruggedness

 Low R

(Typ 12.4m

Ω)@V

 Low Gate Charge (Typ 117nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Synchronous Rectification,

Li Battery Protect Board, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 35A

R

12.4m

Ω@V

1

2

3

DFN5x6