поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

SW4N70D1 датащи(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

номер детали SW4N70D1
подробное описание детали  N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2 MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
домашняя страница  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW4N70D1 датащи(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW4N70D1 Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW4N70D1 Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW4N70D1 Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW4N70D1 Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW4N70D1 Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW4N70D1 Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW4N70D1
May. 2017. Rev. 5.0
2/6
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=250uA
700
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=250uA, referenced to 25
oC
0.6
V/oC
I
DSS
Drain to source leakage current
V
DS=700V, VGS=0V
1
uA
V
DS=560V, TC=125
oC
50
uA
I
GSS
Gate to source leakage current, forward
V
GS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
V
GS=-30V, VDS=0V
-100
nA
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=250uA
2.5
4.5
V
R
DS(ON)
Drain to source on state resistance
V
GS=10V, ID=2A
2.1
2.65
Ω
G
fs
Forward transconductance
V
DS=30V, ID=2A
3.1
S
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=25V, f=1MHz
546
pF
C
oss
Output capacitance
72
C
rss
Reverse transfer capacitance
18
t
d(on)
Turn on delay time
V
DS=350V, ID=4A, RG=25Ω,
V
GS=10V
(note 4,5)
12
ns
t
r
Rising time
29
t
d(off)
Turn off delay time
44
t
f
Fall time
31
Q
g
Total gate charge
V
DS=560V, VGS=10V, ID=4A,
Ig=2.5mA
(note 4,5)
18
nC
Q
gs
Gate-source charge
3.2
Q
gd
Gate-drain charge
9.4
R
g
Gate resistance
V
DS=0V, Scan F mode
3.2
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
4
A
I
SM
Pulsed source current
16
A
V
SD
Diode forward voltage drop.
I
S=4A, VGS=0V
1.4
V
t
rr
Reverse recovery time
I
S=4A, VGS=0V,
dI
F/dt=100A/us
313
ns
Q
rr
Reverse recovery charge
1.89
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 20mH, IAS = 4A, VDD = 50V, R
G=25Ω, Starting TJ = 25
oC
3.
I
SD ≤ 4A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25
oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.



Html Pages

1 2 3 4 5 6


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com