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SW4N60DC датащи(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

номер детали SW4N60DC
подробное описание детали  N-channel Enhancement mode TO-251/TO-252MOSFET
PDF  6 Pages
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производитель  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
домашняя страница  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW4N60DC датащи(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
2/6
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
600
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
0.5
V/oC
IDSS
Drain to source leakage current
VDS=610V, VGS=0V
1
uA
VDS=488V, TC=125oC
50
uA
IGSS
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
VGS=-30V, VDS=0V
-100
nA
Gate to source leakage current, reverse
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
2.5
4.5
V
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 2A
2
2.2
Ω
Gfs
Forward Transconductance
VDS = 30 V, ID = 2A
3.3
S
Dynamic characteristics
Ciss
Input capacitance
VGS=0V, VDS=25V, f=1MHz
586
pF
Coss
Output capacitance
71
Crss
Reverse transfer capacitance
7.6
td(on)
Turn on delay time
VDS=300V, ID=4A, RG=25Ω
(note 4,5)
12
ns
tr
Rising time
27
td(off)
Turn off delay time
33
tf
Fall time
25
Qg
Total gate charge
VDS=480V, VGS=10V, ID=4A
(note 4,5)
17
nC
Qgs
Gate-source charge
8
Qgd
Gate-drain charge
5
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IS
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
4
A
I
SM
Pulsed source current
16
A
VSD
Diode forward voltage drop.
IS=4A, VGS=0V
1.5
V
Trr
Reverse recovery time
IS=4A, VGS=0V,
dIF/dt=100A/us
366
ns
Qrr
Reverse recovery Charge
1.9
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 21mH, IAS = 4A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 4A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
SW4N60DC



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