SW065R85VS datasheet(1/6 Pages) SEMIPOWER

номер детали	SW065R85VS

подробное описание детали	N-channel Enhanced mode SOP-8 MOSFET

PDF	6 Pages

Scroll/Zoom	100%

производитель	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

домашняя страница	http://www.samwinsemi.com

Logo

1 / 6 page

Apr. 2017. Rev. 2.0

1/6

SW065R85VS

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

85

V

I

D

Continuous drain current (@T

C=25

oC)

60*

A

Continuous drain current (@T

C=100

oC)

38*

A

I

DM

Drain current pulsed

(note 1)

240

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

283

mJ

E

AR

Repetitive avalanche energy

(note 1)

14

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@Ta=25oC)

2.8

W

Derating factor above 25oC

0.02

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient

44

oC/W

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW K 065R85VS

SW065R85VS

SOP-8

REEL

N-channel Enhanced mode SOP-8 MOSFET

Features

 High ruggedness

 Low R

DS(ON) (Typ 7.9mΩ)@VGS=4.5V

Low R

DS(ON) (Typ 5.8mΩ)@VGS=10V

 Low Gate Charge (Typ 65nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Synchronous Rectification,

Li Battery Protect Board, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

DSS : 85V

I

D

: 60A

R

DS(ON) : 7.9mΩ@VGS=4.5V

5.8m

Ω@V

GS=10V

G(4)

D(5,6,7,8）

S(1,2,3)

SOP-8

Note: R

thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R

thjc is guaranteed by design while Rthca is determined by the user's

board design.

SOP-8 R

thja : 44

oC/W on a 1 in2 pad of 2oz copper.

D

G

S

Аналогичный номер детали - SW065R85VS

производитель	номер детали	датащи	подробное описание детали
Xian Semipower Electron...	SW065R68E7T	689Kb / 6P	N-channel Enhanced mode TO-252 MOSFET Aug. 2019

More results

Аналогичное описание - SW065R85VS

производитель	номер детали	датащи	подробное описание детали
Xian Semipower Electron...	SW15N04V	1,017Kb / 6P	N-channel Enhanced mode SOP-8/DFN5x6 MOSFET
	SW15N06V	897Kb / 6P	N-channel Enhanced mode SOP-8 MOSFET
	SW15P03	856Kb / 6P	P-channel Enhanced mode SOP-8 MOSFET
	SW051R85VS	731Kb / 6P	N-channel Enhanced mode SOP-8 MOSFET
	SW100R08VS	564Kb / 6P	N-channel Enhanced mode SOP-8 MOSFET
	SW125R08VS	578Kb / 6P	N-channel Enhanced mode SOP-8 MOSFET
	SW200R10VT	831Kb / 7P	N-channel Enhanced mode TO-252/TO-251/SOP-8 MOSFET
	SW4459	832Kb / 6P	P-channel Enhanced mode SOP-8 MOSFET
	SW7960U	592Kb / 6P	Dual N-channel Enhanced mode SO-8 MOSFET
	SW9435	538Kb / 4P	P-channel SOP-8 MOSFET

More results

SW065R85VS датащи(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

SW065R85VS датащи(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

Аналогичный номер детали - SW065R85VS

Аналогичное описание - SW065R85VS

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL