Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Apr. 2017. Rev. 7.0

1/7

SW038R10ES

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-263

TO-220

TO-247

V

DSS

Drain to source voltage

100

V

I

D

Continuous drain current (@T

120*

A

Continuous drain current (@T

100*

A

I

DM

Drain current pulsed

(note 1)

480

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

1126

mJ

E

AR

Repetitive avalanche energy

(note 1)

106

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

205

216

260

W

1.6

1.7

2.1

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-263

TO-220

TO-247

R

thjc

Thermal resistance, Junction to case

0.61

0.58

0.48

R

thja

Thermal resistance, Junction to ambient

53

35

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

TO-263

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW B 038R10ES

SW038R10ES

TO-263

TUBE

2

SW P 038R10ES

SW038R10ES

TO-220

TUBE

3

SW T 038R10ES

SW038R10ES

TO-247

TUBE

1

2

3

N-channel Enhanced mode TO-263/TO-220/TO-247 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 132nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Synchronous Rectification,

Inverter , Li Battery Protect Board

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 120A

R

1

2

3

TO-220

1

2

3

TO-247

1

2

3