Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Feb. 2017. Rev. 2.0

1/6

SW031R06ET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-263

V

DSS

Drain to source voltage

60

V

I

D

Continuous drain current (@T

120*

A

Continuous drain current (@T

76*

A

I

DM

Drain current pulsed

(note 1)

480

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

1451

mJ

E

AR

Repetitive avalanche energy

(note 1)

100

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

266

245

W

2.1

2.0

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220

TO-263

R

thjc

Thermal resistance, Junction to case

0.47

0.51

R

thja

Thermal resistance, Junction to ambient

51

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW P 031R06ET

SW031R06ET

TO-220

TUBE

2

SW B 031R06ET

SW031R06ET

TO-263

TUBE

N-channel Enhanced mode TO-220/TO-263 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 148nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Electronic Ballast , Motor

Control , Synchronous Rectification, Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 120A

R

1

2

3

TO-220

1

2

3

TO-263

1

2

3