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Jun. 2016. Rev. 2.0

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SW15N06V

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

60

V

I

D

Continuous drain current (@T

15*

A

Continuous drain current (@T

9.5*

A

I

DM

Drain current pulsed

(note 1)

60

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

371

mJ

E

AR

Repetitive avalanche energy

(note 1)

14

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

2.6

W

0.02

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient（note）

48

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW K 15N06V

SW15N06V

SOP-8

REEL

N-channel Enhanced mode SOP-8 MOSFET

Features

 High ruggedness

 Low R

(Typ 8.5m

Ω)@V

 Low Gate Charge (Typ 79nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:DC-DC Converter, Motor Control

Power Supplies

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics,

including fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics.

BV

I

D

: 15A

R

8.5m

Ω@VGS=4.5V

G

D

S

SOP-8

D

D

D

D

G

S

S

S

Note: R

efined as the solder mounting surface of the drain pins. R

board design.