Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Sep. 2016. Rev. 2.0

1/7

SW13N65K2

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220F TO-251 TO-252

V

DSS

Drain to source voltage

650

V

I

D

Continuous drain current (@T

13*

A

Continuous drain current (@T

8.2*

A

I

DM

Drain current pulsed

(note 1)

52

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

200

mJ

E

AR

Repetitive avalanche energy

(note 1)

21

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

33.8

143.7

134.4

W

0.27

1.15

1.08

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-220F TO-251

TO-252

R

thjc

Thermal resistance, Junction to case

3.7

0.87

0.93

R

thja

Thermal resistance, Junction to ambient

50

79

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW F 13N65K2

SW13N65K2

TO-220F

TUBE

2

SW I 13N65K2

SW13N65K2

TO-251

TUBE

3

SW D 13N65K2

SW13N65K2

TO-252

REEL

N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 28nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: LED, Charge, Adaptor

General Description

This power MOSFET is produced with super junction advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 13A

R

1

2

3

TO-220F

1

2

3

TO-251

1

2

3

TO-252

1

2

3