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© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

V

DGR

T

J

= 25

°C to 150°C; R

1000

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

A

I

DM

T

20

A

P

D

T

180

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

TO-247 AD (IXTH)

Standard

Power MOSFET

N-Channel Enhancement Mode

TO-204 AA (IXTM)

G = Gate,

D = Drain,

S = Source,

TAB = Drain

D

G

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

GS

= 0 V, I

1000

V

V

GS(th)

V

DS

= V

2

4.5

V

I

GSS

V

GS

=

±20 V

±100

nA

I

DSS

V

DS

= 0.8 • V

DSS

T

250

µA

V

GS

= 0 V

T

mA

R

DS(on)

V

GS

= 10 V, I

5N100

2.4

Ω

5N100A

2.0

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

V

DSS

I

D25

R

DS(on)

IXTH / IXTM 5N100

1000 V

5 A

2.4

Ω

Ω

Ω

Ω

Ω

IXTH / IXTM 5N100A

1000 V

5 A

2.0

Ω

Ω

Ω

Ω

Ω

Features

l

International standard packages

l

Low R

l

Rugged polysilicon gate cell structure

l

Low package inductance (< 5 nH)

- easy to drive and to protect

l

Fast switching times

Applications

l

Switch-mode and resonant-mode

power supplies

l

Motor controls

l

Uninterruptible Power Supplies (UPS)

l

DC choppers

Advantages

l

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

l

Space savings

l

High power density

93009C (4/96)

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.