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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

V

DGR

T

J

= 25

°C to 150°C; R

1000

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

1.5

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

6A

I

AR

1.5

A

E

AR

T

C

= 25

°C6

mJ

E

AS

T

C

= 25

°C

200

mJ

dv/dt

I

S

≤ I

3

V/ns

T

J

≤ 150°C, R

P

D

T

C

= 25

°C54

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque

1.13/10

Nm/lb.in.

Weight

4

g

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

G = Gate,

D = Drain,

S = Source,

TAB = Drain

D (TAB)

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

1000

V

V

GS(th)

V

DS

= V

2.5

4.5

V

I

GSS

V

±100

nA

I

DSS

V

DS

= V

DSS

T

µA

V

T

500

µA

R

DS(on)

V

11

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Features

TM

process

Applications

power supplies

Advantages

98545A (11/99)

G D

S

TO-220AB (IXTP)

G

S

TO-263 AA (IXTA)

D (TAB)

V

DSS

= 1000 V

I

D25

=

1.5 A

R

11

Ω

Ω

Ω

Ω

Ω

Advanced Technical Information

IXTA 1N100

IXTP 1N100

N-Channel Enhancement Mode

Avalanche Energy Rated

IXYS reserves the right to change limits, test conditions, and dimensions.

High Voltage

MOSFET