2CL2FE

200mA 6.0kV 100nS-- High Voltage Diodes

GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2016 1 / 1

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value Units

Repetitive Peak Renerse Voltage

Ta=25°C;

6.0

kV

Average Output Current

Ta=25°C;Resistive Load

200

mA

Suege Current

Ta=25°C; 1/2 Sine(60Hz)

10

A

Junction Temperature

-40~+125

°C

Allowable Operation Case Temperature

Tc

125

°C

Storage Temperature

-40~+125

°C

ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)

Items

Symbols

Condition

Data value Units

Maximum Forward Voltage Drop

18

V

Maximum Reverse Current

2.0

uA

15

uA

Maximum Reverse Recovery Time

100

nS

Junction Capacitance

15

pF

HVGT High voltage silicon rectifier diodes is made of

high quality glass passivated chip and high reliability

epoxy resin sealing structure, and through professional

testing equipment inspection qualified after to customers.

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: DO-308

FEATURES:

1. High reliability design.

2. High voltage design.

3. High frequency .

4. Conform to RoHS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. Other.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 0.26 grams (approx).