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LM832 датащи(PDF) 2 Page - National Semiconductor (TI) |
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LM832 датащи(HTML) 2 Page - National Semiconductor (TI) |
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2 / 10 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage 10V Power Dissipation (Note 1) 12W Input Voltage 17 Vpp Storage Temperature b 65 to a150 C Operating Temperature (Note 1) b 40 to a85 Soldering Information Y Dual-In-Line Package Soldering (10 seconds) 260 C Y Small Outline Package Vapor Phase (60 seconds) 215 C Infrared (15 seconds) 220 C See AN-450 ‘‘Surface Mounting Methods and Their Effects on Products Reliability’’ for other methods of soldering sur- face mount devices’’ DC Electrical Characteristics TA 25 CVCC 30V Symbol Parameter Conditions Min Typ Max Units VOP Operating Voltage Supply Voltage for Normal Operation 15 30 90 V ICC(1) Supply Current (1) Pin 9 to GND 01 mF BW Min Note 2 25 40 mA ICC(2) Supply Current (2) DC GND Pin 9 with 2k BW Max Note 2 50 80 mA VIN(1) Input Voltage (1) Pin 2 Pin 13 020 036 05 V VIN(2) Input Voltage (2) Pin 6 050 065 08 V VIN(3) Input Voltage (3) Pin 9 050 065 08 V VOUT(1) Output Voltage (1) Pin 4 Pin 11 020 035 050 V VOUT(2) Output Voltage (2) Pin 5 Stereo Mode 015 028 040 V VOUT(3) Output Voltage (3) Pin 5 Monaural Mode DC Ground Pin 14 010 020 030 V VOUT(4) Output Voltage (4) Pin 8 025 040 060 V VOUT(5) Output Voltage (5) Pin 10 BW Max Note 2 100 127 150 V VOUT(6) Output Voltage (6) Pin 10 BW Min Note 2 050 065 075 V VOS Output DC Shift Pin 4 PIN 11 Change BW Min to Max 10 30 mV AC Electrical Characteristics Symbol Parameter Conditions Min Typ Max Units MAIN SIGNAL PATH (Note 3) AV Voltage Gain VIN 30 mVrms f 1 kHz BW Max Note 2 b 10 00 a 10 dB CB Channel Balance VIN 30 mVrms f 1 kHz BW Max Note 2 b 10 0 a 10 dB fMIN Min Bandwidth 01 mF between Pin 9 - GND 600 1000 1500 Hz fMAX Max Bandwidth DC Ground Pin 9 with 2k 24 30 46 kHz THD Distortion VIN 30 mVrms f 1 kHz BW Max Note 2 007 05 % MVIN Max Input Voltage THD 3% f 1 kHz BW Max Note 2 120 150 mVrms SN Signal to Noise REF 30 mVrms BW Max CCIRARM 60 68 dB ZIN Input Impedance Pin 2 Pin 13 14 20 26 kX CS Channel Separation Ref 30 mVrms f 1 kHz BW Max Note 2 40 68 dB PSRR PSRR VRIPPLE 50 mVrms f 100 Hz 40 55 dB CONTROL PATH AVsum(1) Summing Amp Gain (1) VIN 30 mVrms at R and L f 1 kHz b 30 b 15 00 dB AVsum(2) Summing Amp Gain (2) DC Ground Pin 14 f 1 kHz b 90 b 60 b 30 dB AV 1st Gain Amp Gain Pin 6 to Pin 8 25 30 35 dB ZIN 1st Input Impedance Pin 6 28 40 52 kX AVPKD Peak Detector Gain AC In DC Out Pin 9 to Pin 10 25 30 35 VV ZINPKD Input Impedance Pin 9 500 800 1100 X VRPKD Output DC Change Pin 10 Change BW Min to Max 05 062 08 V Note 1 For operation in ambient temperature above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance junction to ambient as follows LM832N 90 cw LM832M-115 cw Note 2 To force the DNR system into maximum bandwidth connect a 2k resistor from pin 9 to GND AC ground pin 9 or pin 6 to select minimum bandwidth To change minimum and maximum bandwidth see Application Hints Note 3 The maximum noise reduction CCIRARM weighted is about 14 dB This is accomplished by changing the bandwidth from maximum to minimum In actual operation minimum bandwidth is not selected a nominal minimum bandwidth of about 2 kHz gives 10 dB of noise reduction See Application Hints 2 |
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