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LM832 датащи(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали LM832
подробное описание детали  Dynamic Noise Reduction System DNR
PDF  10 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM832 датащи(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage
10V
Power Dissipation (Note 1)
12W
Input Voltage
17 Vpp
Storage Temperature
b
65 to a150 C
Operating Temperature (Note 1)
b
40 to a85
Soldering Information
Y
Dual-In-Line Package
Soldering (10 seconds)
260 C
Y
Small Outline Package
Vapor Phase (60 seconds)
215 C
Infrared (15 seconds)
220 C
See AN-450 ‘‘Surface Mounting Methods and Their Effects
on Products Reliability’’ for other methods of soldering sur-
face mount devices’’
DC Electrical Characteristics TA
25 CVCC
30V
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VOP
Operating Voltage
Supply Voltage for Normal Operation
15
30
90
V
ICC(1)
Supply Current (1)
Pin 9 to GND 01 mF BW
Min Note 2
25
40
mA
ICC(2)
Supply Current (2)
DC GND Pin 9 with 2k BW
Max Note 2
50
80
mA
VIN(1)
Input Voltage (1)
Pin 2 Pin 13
020
036
05
V
VIN(2)
Input Voltage (2)
Pin 6
050
065
08
V
VIN(3)
Input Voltage (3)
Pin 9
050
065
08
V
VOUT(1)
Output Voltage (1)
Pin 4 Pin 11
020
035
050
V
VOUT(2)
Output Voltage (2)
Pin 5 Stereo Mode
015
028
040
V
VOUT(3)
Output Voltage (3)
Pin 5 Monaural Mode DC Ground Pin 14
010
020
030
V
VOUT(4)
Output Voltage (4)
Pin 8
025
040
060
V
VOUT(5)
Output Voltage (5)
Pin 10 BW
Max Note 2
100
127
150
V
VOUT(6)
Output Voltage (6)
Pin 10 BW
Min Note 2
050
065
075
V
VOS
Output DC Shift
Pin 4 PIN 11 Change BW Min to Max
10
30
mV
AC Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
MAIN SIGNAL PATH (Note 3)
AV
Voltage Gain
VIN
30 mVrms f
1 kHz BW
Max Note 2
b
10
00
a
10
dB
CB
Channel Balance
VIN
30 mVrms f
1 kHz BW
Max Note 2
b
10
0
a
10
dB
fMIN
Min Bandwidth
01 mF between Pin 9 - GND
600
1000
1500
Hz
fMAX
Max Bandwidth
DC Ground Pin 9 with 2k
24
30
46
kHz
THD
Distortion
VIN 30 mVrms f 1 kHz BW Max Note 2
007
05
%
MVIN
Max Input Voltage
THD
3% f
1 kHz BW
Max Note 2
120
150
mVrms
SN
Signal to Noise
REF
30 mVrms BW
Max CCIRARM
60
68
dB
ZIN
Input Impedance
Pin 2 Pin 13
14
20
26
kX
CS
Channel Separation
Ref
30 mVrms f
1 kHz BW
Max Note 2
40
68
dB
PSRR
PSRR
VRIPPLE 50 mVrms f 100 Hz
40
55
dB
CONTROL PATH
AVsum(1)
Summing Amp Gain (1)
VIN 30 mVrms at R and L f 1 kHz
b
30
b
15
00
dB
AVsum(2)
Summing Amp Gain (2)
DC Ground Pin 14 f
1 kHz
b
90
b
60
b
30
dB
AV 1st
Gain Amp Gain
Pin 6 to Pin 8
25
30
35
dB
ZIN 1st
Input Impedance
Pin 6
28
40
52
kX
AVPKD
Peak Detector Gain
AC In DC Out Pin 9 to Pin 10
25
30
35
VV
ZINPKD
Input Impedance
Pin 9
500
800
1100
X
VRPKD
Output DC Change
Pin 10 Change BW Min to Max
05
062
08
V
Note 1
For operation in ambient temperature above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance
junction to ambient as follows LM832N
90 cw LM832M-115 cw
Note 2
To force the DNR system into maximum bandwidth connect a 2k resistor from pin 9 to GND AC ground pin 9 or pin 6 to select minimum bandwidth To
change minimum and maximum bandwidth see Application Hints
Note 3
The maximum noise reduction CCIRARM weighted is about 14 dB This is accomplished by changing the bandwidth from maximum to minimum In actual
operation minimum bandwidth is not selected a nominal minimum bandwidth of about 2 kHz gives 10 dB of noise reduction See Application Hints
2



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