SMP100LC-xxx

3/8

100

50

%IPP

t

t

r

p

0

t

Symbol

Parameter

Value

Unit

Repetitive peak pulse current:

10/1000

µs

8/20

µs

10/560 µs

5/310 µs

10/160 µs

1/20 µs

2/10

µs

100

250

120

150

200

250

500

A

Fail-safe mode : maximum current (note 1)

8/20

µs5

kA

Non repetitive surge peak on-state current

(Sinusoidal)

t = 20ms

t = 16.6ms

t = 0.2s

t=2s

55

60

25

12

A

I²t

I²t value for fusing

t = 16.6ms

t = 20ms

30

A²s

Maximum lead temperature for soldering during 10s

260

°C

Tj

Storage temperature range

Maximum junction temperature

-55to+150

150

°C

°C

Note 1: in fail safe mode, the device acts as a short circuit.

= 25°C)

Type

max.

max.

Note 1

Dynamic

max.

max

Note 2

Static

max.

max

Note 3

min.

Note 4

C

typ.

Note 5

C

typ.

Note 6

µAV

µA

V

V

mAVmA

mA

pF

pF

SMP100LC-8

2

6

50

825

800

15

800

50 (typ)

NA

75

SMP100LC-25

22

25

40

35

150

NA

65

SMP100LC-35

32

35

55

55

150

NA

55

SMP100LC-65

55

65

85

85

150

45

90

SMP100LC-90

81

90

120

125

150

40

80

SMP100LC-120

108

120

155

160

150

35

75

SMP100LC-140

120

140

185

190

150

30

65

SMP100LC-160

144

160

210

220

150

30

65

SMP100LC-200

170

200

265

275

150

30

60

SMP100LC-230

200

230

300

320

150

30

60

SMP100LC-270

230

262

350

370

150

30

60

Note 1:

IR measured at VR guarantee VBR min

≥ VR

Note 4:

See funtional holding current test circuit 3

Note 2:

See functional test circuit 1

Note 5:

VR = 50V bias, VRMS=1V, F=1MHz

Note 3:

See test circuit 2

Note 6:VR = 2V bias, VRMS=1V, F=1MHz

ELECTRICAL PARAMETERS (Tamb = 25°C)

Repetitive peak pulse current

tr: rise time (µs)

tp: pulse duration time (µs)

ex: Pulse waveform 10/1000µs

tr = 10µs

tp = 1000µs