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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5886 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC5886 датащи(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC5886 2002-08-21 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications · High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) · Low collector-emitter saturation: VCE (sat) = 0.22 V (max) · High-speed switching: tf = 55 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V VCEX 80 Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V DC IC 5 Collector current Pulse ICP 10 A Base current IB 0.5 A Ta = 25°C 1 Collector power dissipation Tc = 25°C Pc 20 W Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ¾ ¾ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ¾ ¾ 100 nA Collector-emitter brakedown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ¾ ¾ V hFE (1) VCE = 2 V, IC = 0.5 A 400 ¾ 1000 DC current gain hFE (2) VCE = 2 V, IC = 1.6 A 200 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 1.6 A, IB = 32 mA ¾ ¾ 0.22 V Base-emitter saturation voltage VBE (sat) IC = 1.6 A, IB = 32 mA ¾ ¾ 1.10 V Rise time tr ¾ 63 ¾ Storage time tstg ¾ 560 ¾ Switching time Fall time tf See Figure 1 circuit diagram VCC ~- 24 V, RL = 15 W IB1 = 32 mA, IB2 = -53 mA ¾ 55 ¾ ns Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7J1A Weight: 0.36 g (typ.) |
Аналогичный номер детали - 2SC5886 |
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Аналогичное описание - 2SC5886 |
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