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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AT45DB161B-RU датащи(PDF) 16 Page - ATMEL Corporation |
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AT45DB161B-RU датащи(HTML) 16 Page - ATMEL Corporation |
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16 / 33 page  16 AT45DB161B 2224I–DFLSH–10/04 Write Operations The following block diagram and waveforms illustrate the various write sequences available. Main Memory Page Program through Buffers Buffer Write Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page) FLASH MEMORY ARRAY PAGE (528 BYTES) BUFFER 2 (528 BYTES) BUFFER 1 (528 BYTES) I/O INTERFACE SI BUFFER 1 TO MAIN MEMORY PAGE PROGRAM MAIN MEMORY PAGE PROGRAM THROUGH BUFFER 2 BUFFER 2 TO MAIN MEMORY PAGE PROGRAM MAIN MEMORY PAGE PROGRAM THROUGH BUFFER 1 BUFFER 1 WRITE BUFFER 2 WRITE SI CMD n n+1 Last Byte · Completes writing into selected buffer · Starts self-timed erase/program operation CS r r , PA11-6 PA5-0, BFA9-8 BFA7-0 SI CMD X X···X, BFA9-8 BFA7-0 n n+1 Last Byte · Completes writing into selected buffer CS SI CMD PA5-0, XX X CS Starts self-timed erase/program operation r r , PA11-6 Each transition represents 8 bits and 8 clock cycles n = 1st byte read n+1 = 2nd byte read |
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