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TP0202K датащи(PDF) 2 Page - Vishay Siliconix |
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TP0202K датащи(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() TP0202K Vishay Siliconix www.vishay.com 2 Document Number: 71609 S-41777—Rev. D, 04-Oct-04 SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −100 mA −30 −38 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −1.3 −2 −3.0 V Gate Body Leakage IGSS VDS = 0 V, VGS = "5 V "50 Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V "300 nA Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −100 Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V, TJ = 85_C −10 mA On-State Drain Currenta ID(on) VDS = −10 V, VGS = −10 V −500 mA Drain Source On Resistancea rDS( ) VGS = −4.5 V, ID = −50 mA 2.1 3.5 W Drain-Source On-Resistancea rDS(on) VGS = −10 V, ID = −500 mA 1.25 1.4 W Forward Transconductancea gfs VDS = −5 V, ID = −200 mA 315 mS Diode Forward Voltagea VSD IS = −250 mA, VGS = 0 V −1.2 V Dynamic Total Gate Charge Qg 1000 Gate-Source Charge Qgs VDS = −16 V, VGS = −10 V, ID ^ −200 mA 225 pC Gate-Drain Charge Qgd DS GS D 175 p Input Capacitance Ciss 31 Output Capacitance Coss VDS = −15 V, VGS = 0 V, f = 1 MHz 11 pF Reverse Transfer Capacitance Crss DS GS 4 p Switchingb Turn On Time td(on) 9 Turn-On Time tr VDD = −15 V, RL = 75 W 6 ns Turn Off Time td(off) VDD = 15 V, RL = 75 W ID ^ −200 mA, VGEN = −10 V, RG = 6 W 30 ns Turn-Off Time tf 20 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
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