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TLOU114P датащи(PDF) 2 Page - Toshiba Semiconductor |
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TLOU114P датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() TLOU114P,TLSU114P,TLYU114P 2002-09-25 2 Electrical And Optical characteristics (Ta = 25°C) Typ.Emission Wevelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Prodact λp ∆λ IF Min Typ. IF Typ. Max IF Max VR TLOU114P 612 15 20 47.6 250 20 2.0 2.4 20 50 4 TLSU114P 636 17 20 47.6 250 20 2.0 2.4 20 50 4 TLYU114P 590 13 20 47.6 130 20 2.1 2.5 20 50 4 Unit nm mA mcd mA V mA µA V Precaution Please be careful of the followings · Soldering temperature: 260°C max Soldering time: 3s max (Soldering portion of lead: up to 2mm from the body of the device) · If the lead is formed, the lead should be formed up to 5mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. · This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp,please ensure that it will not be affected by this IR light. |
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