MMF80R900PC datasheet(3/10 Pages) MGCHIP

номер детали	MMF80R900PC

подробное описание детали	800V 0.9(ohm) N-channel MOSFET

PDF	10 Pages

Scroll/Zoom	100%

производитель	MGCHIP [MagnaChip Semiconductor.]

домашняя страница	http://www.magnachip.co.kr

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3 / 10 page

MMF80R900PC Datasheet

Feb. 2016 Revision 0.0

MagnaChip Semiconductor Ltd.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain

– Source

Breakdown voltage

V(BR)DSS

800

VGS = 0V,

ID=0.25mA

Gate Threshold Voltage

VGS(th)

2.1

3.9

VDS = VGS, ID=0.25mA

Zero Gate Voltage

Drain Current

IDSS

μA

VDS = 800V,

VGS = 0V

Gate Leakage Current

IGSS

100

VGS = ±30V,

VDS =0V

Drain-Source On

State Resistance

RDS(ON)

0.78

0.9

Ω

VGS = 10V, ID = 3.8A

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Input Capacitance

Ciss

574

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

508

Reverse Transfer Capacitance

Crss

Effective Output Capacitance

Energy Related

(3)

Co(er)

16.7

VDS = 0V to 640V,

VGS = 0V,f = 1.0MHz

Turn On Delay Time

td(on)

12.8

VGS = 10V, RG = 25Ω,

VDS = 400V, ID = 6A

Rise Time

22.4

Turn Off Delay Time

td(off)

54.4

Fall Time

23.6

Total Gate Charge

17.6

VGS = 10V, VDS =640V,

ID = 6A

Gate

– Source Charge

Qgs

3.9

Gate

– Drain Charge

Qgd

6.7

Gate Resistance

2.5

Ω

VGS = 0V, f = 1.0MHz

3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS

 Static Characteristics (T

c=25℃ unless otherwise specified)

 Dynamic Characteristics (T

c=25℃ unless otherwise specified)

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