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PDTC115ES датащи(PDF) 4 Page - NXP Semiconductors

номер детали PDTC115ES
подробное описание детали  NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
PDF  14 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PDTC115ES датащи(HTML) 4 Page - NXP Semiconductors

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2004 Aug 06
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 100 k
Ω, R2 = 100 kΩ
PDTC115E series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
µm copper strip line.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PDTC115EE
plastic surface mounted package; 3 leads
SOT416
PDTC115EEF
plastic surface mounted package; 3 leads
SOT490
PDTC115EK
plastic surface mounted package; 3 leads
SOT346
PDTC115EM
leadless ultra small plastic package; 3 solder lands; body
1.0
× 0.6 × 0.5 mm
SOT883
PDTC115ES
plastic single-ended leaded (through hole) package; 3 leads
SOT54
PDTC115ET
plastic surface mounted package; 3 leads
SOT23
PDTC115EU
plastic surface mounted package; 3 leads
SOT323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
10
V
VI
input voltage
positive
+40
V
negative
−−10
V
IO
output current (DC)
20
mA
ICM
peak collector current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT54
note 1
500
mW
SOT23
note 1
250
mW
SOT346
note 1
250
mW
SOT323
note 1
200
mW
SOT416
note 1
150
mW
SOT883
notes 2 and 3
250
mW
SOT490
notes 1 and 2
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient
temperature
−65
+150
°C



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