2004 Aug 06

5

Philips Semiconductors

Product specification

NPN resistor-equipped transistors;

R1 = 100 k

Ω, R2 = 100 kΩ

PDTC115E series

THERMAL CHARACTERISTICS

Notes

1. Refer to standard mounting conditions.

2. Reflow soldering is the only recommended soldering method.

3. Refer to SOT883 standard mounting conditions; FR4 with 60

µm copper strip line.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air

SOT54

note 1

250

K/W

SOT23

note 1

500

K/W

SOT346

note 1

500

K/W

SOT323

note 1

625

K/W

SOT416

note 1

833

K/W

SOT833

notes 2 and 3

500

K/W

SOT490

notes 1 and 2

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector-base cut-off current

−−

100

nA

collector-emitter cut-off current

−−

1

µA

−−

50

µA

emitter-base cut-off current

−−

50

µA

DC current gain

80

−−

collector-emitter saturation voltage

−−

150

mV

input-off voltage

−

1.1

0.5

V

input-on voltage

3

1.5

−

V

R1

input resistor

70

100

130

k

Ω

resistor ratio

0.8

1

1.2

collector capacitance

f = 1 MHz

−−

2.5

pF

R2

R1

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