MSI2001MH datasheet(3/12 Pages) MGCHIP

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Preliminary – Subject to change without notice

Feb. 2012. Revision 1.6

MagnaChip Semiconductor Ltd

Absolute Maximum Ratings

(Note 1)

Symbol

Parameter

Min

Max

Unit

VDD

DC Supply Voltage on VDD pin

-0.5

4.6

VSEL

Control Input Voltage

-0.5

4.6

VIN/OUT

Input Voltage in D*, DA/B*

DA/B+, DA/B-

-0.5

VDD+0.3

D+,D- when VDD > 0

-0.5

VDD+0.3

D+,D- when VDD = 0

-0.5

5.25

IIN/OUT

In/Out Current in D*, DA/B*

ESD

HBM (Note 2)

8000

MM (Note 3)

400

CDM (Note 4)

1500

Storage Temperature

-65

+150

°C

Note 1: Stresses beyond the above listed maximum ratings may damage the device permanently. Operating above the recommended

conditions for extended time may stress the device and affect device reliability. Also the device may not operate normally above the

recommended operating conditions. These are stress ratings only.

Note 2: ESD tested per JESD22A-114E.

Note 3: ESD tested per JESD22A-115.

Note 4: ESD tested per JESD22C-101.

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

VDD

Supply Voltage

4.3

VSEL

Control Input Voltage (Note 1)

VDD

VIN/OUT

Input Voltage in D*, DA/B*

VDD

Operating Temperature

-40

+85

°C

Note1: Control pin input must be held “HIGH” or “LOW” and it must not float during operation.

DC Electrical Characteristics

All listed typical values are at 25°C unless otherwise specified. Boldface values indicate -40°C to +125°C of TJ.

Symbol

Parameter

Test Conditions

VDD(V)

Min

Typ

Max

Unit

VSEL_H

Control Input High Voltage

3 ≤ VDD ≤ 3.6V

3.0 ~ 3.6

1.3

VDD = 4.3V

4.3

1.7

VSEL_L

Control Input Low Voltage

3 ≤ VDD ≤ 3.6V

3.0 ~ 3.6

0.5

VDD = 4.3V

4.3

0.7

ISEL

Control Input Leakage Current

0 < VSEL ≤ VDD

4.3

-1

µA

ICC

Quiescent Supply Current

VSEL = 0 or VDD, IIN/OUT = 0A

4.3

µA

ICCT

Increase in ICC on VDD pin per

Control Voltage

VSEL = 2.6V

4.3

µA

ILEAK

OFF State Leakage Current on

D±, DA±, DB±

0 < VD±, DA±, DB± ≤ 3.6V

4.3

-2

µA

IOFF

Power OFF Leakage Current on

D± (See Figure 1)

VD+,D- = 4.3V

-2

µA

RON

On-Resistance

(See Figure 2)

VIN/OUT = 0.4V, IIN/OUT = 8mA

3.0

6.5

Ω

RON

On-Resistance Match Between

Channels (Note 1)

VIN/OUT = 0.4V, IIN/OUT = 8mA

3.0

0.35

Ω

RFLAT_ON

RON Flatness (Note 2)

0 < VIN/OUT ≤ 1.0V, IIN/OUT = 8mA

3.0

Ω

Note 1: •rRON(MAX) = | RON(Channel1)-RON(Channel2) |

Note 2: RFLAT_ON is defined as the difference between the maximum and minimum value of RON measured over specified VIN/OUT range.

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