PCF5079T datasheet(3/28 Pages) PHILIPS

3 / 28 page

2001 Nov 21

Philips Semiconductors

Product speciﬁcation

Dual-band power ampliﬁer controller for

GSM, PCN and DCS

PCF5079

FEATURES

• Compatible with baseband interface family PCF5073x

• Two power sensor inputs

• Temperature compensation of sensor signal

• Active filter for Digital-to-Analog Converter (DAC) input

• Power Amplifier (PA) protection against mismatching

• Bias current source for detector diodes

• Generation of pre-bias level for PA at start of burst

(home position)

• Compatible with a wide range of silicon PAs

• Compatible with multislot class 12

• Dual output with internal switch

• Two different transfer functions

• Possibility to adapt dynamic transfer functions

• Very small outline package (3 × 3 mm).

APPLICATIONS

• Global System for Mobile communication (GSM)

• Personal Communications Network (PCN) systems.

GENERAL DESCRIPTION

This CMOS device integrates an amplifier for the detected

RF voltage from the sensor, an integrator and an active

filter to build a PA control loop for cellular systems with a

small number of passive components.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL

PARAMETER

MIN.

TYP.

MAX.

UNIT

VDD

supply voltage

2.5

3.6

5.0

IDD(tot)

total supply current

−−

Tamb

ambient temperature

−40

−

+85

°C

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

PCF5079T/C/1

TSSOP10

plastic thin shrink small outline package; 10 leads; body width 3 mm

SOT552-1

PCF5079HK/C/1

HVSON10

plastic, heatsink very thin small outline package; no leads;

10 terminals; body 3

× 3 × 0.90 mm

SOT650-1

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