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MMD80R900PC датащи(PDF) 2 Page - MagnaChip Semiconductor.

номер детали MMD80R900PC
подробное описание детали  800V 0.9(ohm) N-channel MOSFET
PDF  10 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MMD80R900PC датащи(HTML) 2 Page - MagnaChip Semiconductor.

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MMD80R900PC Datasheet
Mar. 2014 Revision 1.0
MagnaChip Semiconductor Ltd.
2
Parameter
Symbol
Rating
Unit
Note
Drain
– Source voltage
VDSS
800
V
Gate
– Source voltage
VGSS
±30
V
Continuous drain current
ID
6.0
A
TC=25℃
3.8
A
TC=100℃
Pulsed drain current
(1)
IDM
18
A
Power dissipation
PD
75.8
W
Single - pulse avalanche energy
EAS
230
mJ
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
Diode dv/dt ruggedness
dv/dt
15
V/ns
Storage temperature
Tstg
-55 ~150
℃
Maximum operating junction
temperature
Tj
150
℃
1)
Pulse width tP limited by Tj,max
2)
ISD ≤ ID, VDS peak ≤ V(BR)DSS
Parameter
Symbol
Value
Unit
Thermal resistance, junction-case max
Rthjc
1.65
℃/W
Thermal resistance, junction-ambient max
Rthja
62.5
℃/W
 Thermal Characteristics
 Absolute Maximum Rating (Tc=25℃ unless otherwise specified)



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