MMDF1300

http://onsemi.com

2

Characteristic

Symbol

Polarity

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V(BR)DSS

–

30

–

–

Vdc

Zero Gate Voltage Drain Current

(VDS = 25 Vdc, VGS = 0 Vdc)

IDSS

(N)

(P)

–

–

–

–

1.0

1.0

µAdc

Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0)

IGSS

–

–

–

±100

nAdc

ON CHARACTERISTICS (Notes 2. & 3.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

(N)

(P)

1.0

1.0

1.5

2.0

2.0

3.0

Vdc

Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)

RDS(on)

(N)

(P)

–

–

0.09

0.16

0.10

0.21

Ohms

Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

(N)

(P)

–

–

0.13

0.30

0.16

0.375

Ohms

Forward Transconductance

(VDS = 3.0 Vdc, ID = 1.5 Adc)

gFS

(N)

(P)

1.0

1.0

–

–

–

–

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

16 Vd

Ciss

(N)

(P)

–

–

215

200

301

300

pF

Output Capacitance

(VDS = 16 Vdc,

VGS = 0 Vdc,

f = 1.0 MHz)

Coss

(N)

(P)

–

–

111

100

158

160

Transfer Capacitance

f = 1.0 MHz)

Crss

(N)

(P)

–

–

30

40

60

75

SWITCHING CHARACTERISTICS (Note 4.)

Turn–On Delay Time

td(on)

(N)

(P)

–

–

18

14

36

28

ns

Rise Time

(VDD = 10 Vdc,

ID = 2.0 Adc,

tr

(N)

(P)

–

–

98

95

196

180

Turn–Off Delay Time

ID = 2.0 Adc,

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

(N)

(P)

–

–

16

22

32

45

Fall Time

tf

(N)

(P)

–

–

30

40

60

80

Total Gate Charge

QT

(N)

(P)

–

–

3.3

7.0

5.0

10

nC

(VDS = 16 Vdc,

ID =20Adc

Q1

(N)

(P)

–

–

1.2

1.2

–

–

ID = 2.0 Adc,

VGS = 4.5 Vdc)

Q2

(N)

(P)

–

–

2.0

2.5

–

–

Q3

(N)

(P)

–

–

1.9

3.5

–

–

2. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

3. Negative signs for P–Channel device omitted for clarity.

4. Switching characteristics are independent of operating junction temperature.