MDU5693 datasheet(2/9 Pages) MGCHIP

2 / 9 page

Jan. 2015 Ver. 1.0

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDU5693VRH

-55~150

Dual PDFN56

Tape & Reel

Halogen Free

FET1 Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.0

1.8

3.0

Drain Cut-Off Current

IDSS

VDS = 30V, VGS = 0V

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 20A

4.1

5.0

mΩ

TJ=125

5.6

6.8

VGS = 4.5V, ID = 20A

6.7

8.5

Forward Transconductance

gfs

VDS = 5V, ID = 20A

Dynamic Characteristics

Total Gate Charge

Qg(10V)

VDS = 15.0V, ID = 20A,

VGS = 10V

Total Gate Charge

Qg(4.5V)

6.2

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

1.9

Input Capacitance

Ciss

VDS = 15.0V, VGS = 0V,

f = 1.0MHz

1040

1500

1950

Output Capacitance

Coss

418

610

790

Reverse Transfer Capacitance

Crss

Turn-On Delay Time

td(on)

VGS = 10V, VDS=15V,

ID=20A, Rg=3.0Ω

10.5

Rise Time

11.3

Turn-Off Delay Time

td(off)

28.5

Fall Time

5.1

Gate Resistance

f=1 MHz

0.5

1.0

2.0

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 1A, VGS = 0V

0.7

1.0

Body Diode Reverse Recovery Time

trr

IF = 20A, dl/dt = 200A/μs

30.5

Body Diode Reverse Recovery Charge

Qrr

42.9

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 20 A, VDD = 27V, VGS = 10V.

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