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MBRM110E датащи(PDF) 2 Page - ON Semiconductor |
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MBRM110E датащи(HTML) 2 Page - ON Semiconductor |
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2 / 8 page ![]() MBRM110E http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 10 V Average Rectified Forward Current (TL = 100°C) IO 1.0 A Non–Repetitive Peak Surge Current (Non–Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg –55 to +150 °C Operating Junction Temperature TJ –55 to +150 °C Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ ms THERMAL CHARACTERISTICS Thermal Resistance – Junction–to–Lead (Anode) (Note 1) Thermal Resistance – Junction–to–Tab (Cathode) (Note 1) Thermal Resistance – Junction–to–Ambient (Note 1) Rtjl Rtjtab Rtja 35 23 277 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) VF TJ = 25°C TJ = 100°C V (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) 0.455 0.530 0.595 0.360 0.455 0.540 Maximum Instantaneous Reverse Current (Note 2) IR TJ = 25°C TJ = 100°C mA (VR = 5.0 V) (VR = 10 V) 0.5 1.0 300 500 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. 2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. |
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