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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AS8C803601 датащи(PDF) 16 Page - Alliance Semiconductor Corporation |
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AS8C803601 датащи(HTML) 16 Page - Alliance Semiconductor Corporation |
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16 / 21 page  tHE tSE R/ W A1 A2 CLK CEN ADV/ LD ADDRESS CE1, CE2(2) BW1 - BW4 DATAOUT Q(A3) Q(A1) Q(A6) Q(A7) tCD Read tCHZ 5304 drw 08 Write tCLZ D(A2) D(A4) tCDC D(A5) Write tCH tCL tCYC tHW tSW tHA tSA A4 A3 tHC tSC tSD tHD tHADV tSADV A6 A7 A8 A5 A9 DATAIN tHB tSB OE Read Read NOTES: 1. Q (A1) represents the first output from the external address A1. D (A2) represents the input data to the SRAM corresponding to address A2. 2. CE2 timing transitions are identical but inverted to the CE1 and CE2 signals. For example, when CE1 and CE2 are LOW on this waveform, CE2 is HIGH. 3. Individual Byte Write signals (BWx) must be valid on all write and burst-write cycles. A write cycle is initiated when R/W signal is sampled LOW. The byte write information comes in two cycles before the actual data is presented to the SRAM. |
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