MDP1923TH datasheet(2/6 Pages) MGCHIP

2 / 6 page

Jun. 2015. Rev 1.1

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDP1923TH

-55~150

TO-220

Tube

Halogen Free

Electrical Characteristics (TJ =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

100

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.0

3.0

4.0

Drain Cut-Off Current

IDSS

VDS = 80V, VGS = 0V

1.0

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 15A

10.8

13.9

Ω

Forward Transconductance

gfs

VDS = 10V, ID = 15A

Dynamic Characteristics

Total Gate Charge

VDS = 50V, ID = 25A,

VGS = 10V

42.8

Gate-Source Charge

Qgs

11.7

Gate-Drain Charge

Qgd

8.0

Input Capacitance

Ciss

VDS = 40V, VGS = 0V,

f = 1.0MHz

2,802

Reverse Transfer Capacitance

Crss

Output Capacitance

Coss

432

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 25V,

ID = 50A , RG = 3.0Ω

10.6

Rise Time

10.1

Turn-Off Delay Time

td(off)

32.5

Fall Time

11.9

Gate Resistance

f=1 MHz

1.30

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 25A, VGS = 0V

0.8

1.2

Body Diode Reverse Recovery Time

trr

IF = 25A, dl/dt = 150A/μs

57.6

Body Diode Reverse Recovery Charge

Qrr

138.5

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited

2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 12.0A, VGS = 10V.

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