MDF7N60BTH datasheet(4/8 Pages) MGCHIP

4 / 8 page

Oct. 2010 Version 1.3

MagnaChip Semiconductor Ltd

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

MDP7N60B(TO-220)

Fig.11 Transient Thermal Response Curve

MDP7N60B(TO-220)

-1

-2

-1

10 µs

100 µs

100 ms

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

J=Max rated

C=25

℃

DS, Drain-Source Voltage [V]

-5

-4

-3

-2

-1

-2

-1

Notes :

※

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Zθ JC* Rθ JC

(t) + T

Θ JC

=0.95 /W

℃

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

1, Rectangular Pulse Duration [sec]

120V

300V

480V

Note : I

※

D = 7.0A

G, Total Gate Charge [nC]

Fig.12 Transient Thermal Response Curve

MDF7N60B(TO-220F)

-1

-2

-1

10 µs

100 µs

100 ms

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

J=Max rated

C=25

℃

DS, Drain-Source Voltage [V]

-5

-4

-3

-2

-1

-2

-1

Notes :

※

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Zθ JC* Rθ JC

(t) + T

Θ JC=3.01

℃

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

1, Rectangular Pulse Duration [sec]

Fig.10 Maximum Safe Operating Area

MDF7N60B(TO-220F)

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Notes ;

※

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

MDF7N60BTH датащи(PDF) 4 Page - MagnaChip Semiconductor.

MDF7N60BTH датащи(HTML) 4 Page - MagnaChip Semiconductor.

Html Pages

1 2 3 4 5 6 7 8

датащи скачать

ссылки URL