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MDIS1502TH датащи(PDF) 4 Page - MagnaChip Semiconductor.

номер детали MDIS1502TH
подробное описание детали  Single N-channel Trench MOSFET 30V, 45.7A, 8.5m(ohm)
PDF  5 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDIS1502TH датащи(HTML) 4 Page - MagnaChip Semiconductor.

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June. 2011. Version 1.2
MagnaChip Semiconductor Ltd
.
4
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response
Curve
25
50
75
100
125
150
0
10
20
30
40
50
60
T
A, Case Tem perature [
]
℃
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
10
1
Notes :
※
Duty Factor, D=t
1/t2
PEAK T
J = PDM * Zθ JC* Rθ JC
(t) + T
C
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Rectangular Pulse Duration [sec]
0
5
10
15
20
25
30
0
300
600
900
1200
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes ;
※
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
0
4
8
12
16
0
2
4
6
8
10
V
DS = 15V
Note : I
※
D = 16A
Q
G, T otal Gate Charge [nC]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
1s
100 ms
DC
10 ms
10s
Operation in This Area
is Limited by R
DS(on)
Single Pulse
T
J=Max rated
T
C=25
℃
V
DS, Drain-Source Voltage [V]



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