| поискавой системы для электроныых деталей |
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MDHT3N40 датащи(PDF) 1 Page - MagnaChip Semiconductor. |
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MDHT3N40 датащи(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 6 page ![]() Jun 2012. Version 1.5 MagnaChip Semiconductor Ltd . 1 Absolute Maximum Ratings (Ta = 25 oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current TC=25 oC ID 1.5 A TC=100 oC 0.9 A Pulsed Drain Current (1) IDM 6.0 A Power Dissipation TC=25 oC PD 2.1 W Derate above 25 oC 0.017 W/ oC Peak Diode Recovery dV/dt (3) dV/dt 4.5 V/ns Repetitive Pulse Avalanche Energy (1) EAR 0.21 mJ Avalanche current (1) IAR 1.5 A Single Pulse Avalanche Energy (4) EAS 45 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) RθJA 60 oC/W G MDHT3N40 N-Channel MOSFET 400V, 1.5A, 3.4 General Description The MDHT3N40 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT3N40 is suitable device for SMPS, HID and general purpose applications. Features VDS = 400V ID = 1.5A @VGS = 10V RDS(ON) ≤ 3.4 @VGS = 10V Applications Power Supply PFC LED TV S D D SOT-223 |
Аналогичный номер детали - MDHT3N40 |
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Аналогичное описание - MDHT3N40 |
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