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MDF1903 датащи(PDF) 3 Page - MagnaChip Semiconductor.

номер детали MDF1903
подробное описание детали  Single N-channel Trench MOSFET 100V, 12A, 110m(ohm)
PDF  6 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDF1903 датащи(HTML) 3 Page - MagnaChip Semiconductor.

  MDF1903 Datasheet HTML 1Page - MagnaChip Semiconductor. MDF1903 Datasheet HTML 2Page - MagnaChip Semiconductor. MDF1903 Datasheet HTML 3Page - MagnaChip Semiconductor. MDF1903 Datasheet HTML 4Page - MagnaChip Semiconductor. MDF1903 Datasheet HTML 5Page - MagnaChip Semiconductor. MDF1903 Datasheet HTML 6Page - MagnaChip Semiconductor.  
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Mar. 2016. Version 1.1
MagnaChip Semiconductor Ltd.
3
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5
10
15
20
25
30
8.0V
4.5V
V
GS = 10V
5.0V
4.0V
3.5V
V
DS, Drain-Source Voltage [V]
0
5
10
15
20
25
70
80
90
100
110
120
130
140
150
V
GS = 10V
V
GS = 6.0V
I
D, Drain Current [A]
-50
-25
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
※ Notes :
1. V
GS = 10 V
2. I
D = 9.0 A
T
J, Junction Temperature [
oC]
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
350
400
450
500
※ Notes :
I
D = 9.0A
T
J = 25
℃
V
GS, Gate to Source Volatge [V]
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
V
GS, Gate-Source Voltage [V]
T
J=25
℃
※ Notes :
V
DS = 10V
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
10
0
10
1
T
J=25
℃
※ Notes :
V
GS = 0V
V
SD, Source-Drain voltage [V]



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