MDF1752 datasheet(2/6 Pages) MGCHIP

2 / 6 page

Mar 2016. Version 2.1

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDF1752TH

-55~150

TO-220F

Tube

Halogen Free

Electrical Characteristics (TJ =25

oC unless otherwise noted)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.0

1.7

3.0

Zero Gate Voltage Drain Current

IDSS

VDS = 32V, VGS = 0V

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 14A

6.1

8.0

mΩ

VGS = 4.5V, ID = 11A

8.2

10.5

Forward Transconductance

gFS

VDS = 5V, ID = 14A

Dynamic

Characteristics

Total Gate Charge

VDS = 20V, ID = 14A, VGS = 10V

26.4

Gate-Source Charge

Qgs

3.6

Gate-Drain Charge

Qgd

6.8

Input Capacitance

Ciss

VDS = 20V, VGS = 0V, f = 1.0MHz

1480

Reverse Transfer Capacitance

Crss

113

Output Capacitance

Coss

243

Turn-On

Delay Time

td(on)

VGS = 10V ,VDS = 20V, ID = 1A ,

RGEN = 6Ω

Turn-On Rise Time

Trun-Off Delay Time

td(off)

Trun-Off Fall Time

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 14A, VGS = 0V

0.8

1.2

Body Diode Reverse Recovery Time

trr

IF = 14A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr

Note :

1. PD is based on TJ(MAX)=150°C

a. PD (TC=25°C) is based on RθJC,

b. PD (TA=25°C) is based on RθJA

2. Starting TJ=25°C, L=1mH, IAS=17.5A, VDD=40V, VGS=10V

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