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MDF13N50TH датащи(PDF) 4 Page - MagnaChip Semiconductor.

номер детали MDF13N50TH
подробное описание детали  N-Channel MOSFET 500V, 13.0 A, 0.5(ohm)
PDF  6 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDF13N50TH датащи(HTML) 4 Page - MagnaChip Semiconductor.

  MDF13N50TH Datasheet HTML 1Page - MagnaChip Semiconductor. MDF13N50TH Datasheet HTML 2Page - MagnaChip Semiconductor. MDF13N50TH Datasheet HTML 3Page - MagnaChip Semiconductor. MDF13N50TH Datasheet HTML 4Page - MagnaChip Semiconductor. MDF13N50TH Datasheet HTML 5Page - MagnaChip Semiconductor. MDF13N50TH Datasheet HTML 6Page - MagnaChip Semiconductor.  
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Nov2009. Version 1.2
MagnaChip Semiconductor Ltd
.
4
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
Fig.12 Single Pulse Maximum Power
Dissipation
25
50
75
100
125
150
0
2
4
6
8
10
12
14
T
C, Case Temperature [
]
℃
1E-5
1E-4
1E-3
0.01
0.1
1
10
0
2000
4000
6000
8000
10000
12000
14000
single Pulse
R
thJC = 3.0
/W
℃
T
C = 25
℃
Pulse Width (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
※
Duty Factor, D=t
1/t2
PEAK T
J = PDM * Zθ JC* Rθ JC
(t) + T
C
R
Θ JC=3.0
/W
℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Rectangular Pulse Duration [sec]
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10 µs
100 µs
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
Single Pulse
T
J=Max rated
T
C=25
℃
V
DS, Drain-Source Voltage [V]
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
0
2
4
6
8
10
400V
250V
100V
Note : I
※
D = 13.0A
Q
G, Total Gate Charge [nC]
0.1
1
10
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes ;
※
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]



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