MDF10N65BTH datasheet(3/6 Pages) MGCHIP

номер детали	MDF10N65BTH

подробное описание детали	N-Channel MOSFET 650V, 10.0A, 1.0(ohm)

PDF	6 Pages

Scroll/Zoom	100%

производитель	MGCHIP [MagnaChip Semiconductor.]

домашняя страница	http://www.magnachip.co.kr

Logo

3 / 6 page

Jun. 2010 Version 1.2

MagnaChip Semiconductor Ltd.

Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with

Temperature

Fig.4 Breakdown Voltage Variation vs.

Temperature

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

-50

-25

100

125

150

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

※ Notes :

1. V

GS = 0 V

2. I

= 250㎂

J, Junction Temperature [

oC]

-55

℃

150

℃

* Notes ;

1. Vds=30V

GS [V]

0.0

0.2

0.4

0.6

0.8

1.0

1.2

℃

150

℃

※ Notes :

1. V

GS = 0 V

2.250s Pulse test

SD, Source-Drain Voltage [V]

-50

-25

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

= 4A

J, Junction Temperature [

oC]

Notes

1. 250㎲ Pulse Test

2. T

C=25

℃

gs=5.0V

=5.5V

=6.0V

=6.5V

=7.0V

=8.0V

=10.0V

=15.0V

DS,Drain-Source Voltage [V]

0.8

1.0

GS=10.0V

GS=20V

D,Drain Current [A]

MDF10N65BTH датащи(PDF) 3 Page - MagnaChip Semiconductor.

MDF10N65BTH датащи(HTML) 3 Page - MagnaChip Semiconductor.

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL