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MDF9N60TH датащи(PDF) 1 Page - MagnaChip Semiconductor. |
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MDF9N60TH датащи(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 6 page ![]() Nov 2009. Version 2.2 MagnaChip Semiconductor Ltd . 1 Absolute Maximum Ratings (Ta = 25 oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 600 V Drain-Source Voltage @ Tjmax VDSS @ Tjmax 660 V Gate-Source Voltage VGSS ±30 V TC=25 oC 9.0 A Continuous Drain Current (※) TC=100 oC ID 5.7 A Pulsed Drain Current (1) IDM 32 A TC=25 oC 48 Power Dissipation Derate above 25 oC PD 0.38 W W/ oC Repetitive Avalanche Energy EAR (1) EAR 4.8 mJ Peak Diode Recovery dv/dt (3) Dv/dt 4.5 V/ns Single Pulse Avalanche Energy (4) EAS 480 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) RθJA 62.5 Thermal Resistance, Junction-to-Case (1) RθJC 2.62 oC/W MDF9N60 N-Channel MOSFET 600V, 9A, 0.75Ω General Description The MDF9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V @ Tjmax ID = 9.0A @ VGS = 10V RDS(ON) ≤ 0.75 @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching S D G |
Аналогичный номер детали - MDF9N60TH |
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Аналогичное описание - MDF9N60TH |
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