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MDF8N60TH датащи(PDF) 4 Page - MagnaChip Semiconductor.

номер детали MDF8N60TH
подробное описание детали  N-Channel MOSFET 600V, 8A, 1.0(ohm)
PDF  6 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDF8N60TH датащи(HTML) 4 Page - MagnaChip Semiconductor.

  MDF8N60TH Datasheet HTML 1Page - MagnaChip Semiconductor. MDF8N60TH Datasheet HTML 2Page - MagnaChip Semiconductor. MDF8N60TH Datasheet HTML 3Page - MagnaChip Semiconductor. MDF8N60TH Datasheet HTML 4Page - MagnaChip Semiconductor. MDF8N60TH Datasheet HTML 5Page - MagnaChip Semiconductor. MDF8N60TH Datasheet HTML 6Page - MagnaChip Semiconductor.  
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Nov2009. Version 2.2
MagnaChip Semiconductor Ltd
.
4
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
Fig.12 Single Pulse Maximum Power
Dissipation
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
1s
10 µs
100 µs
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
Single Pulse
T
J=Max rated
T
C=25
℃
V
DS, Drain-Source Voltage [V]
1E-5
1E-4
1E-3
0.01
0.1
1
10
0
2000
4000
6000
8000
10000
12000
14000
16000
single Pulse
R
thJC = 2.71
/W
℃
T
C = 25
℃
Pulse Width (s)
25
50
75
100
125
150
0
2
4
6
8
10
T
C, Case Temperature [
]
℃
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
※
Duty Factor, D=t
1/t2
PEAK T
J = PDM * Zθ JC* Rθ JC
(t) + T
C
R
Θ JC
=2.71 /W
℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Rectangular Pulse Duration [sec]
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
120V
300V
480V
Note : I
※
D = 8A
Q
G, Total Gate Charge [nC]
1
10
0
200
400
600
800
1000
1200
1400
1600
1800
2000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
Notes ;
※
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]



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