Feb 2011. Version 0.0

MagnaChip Semiconductor Ltd

.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDF3N50

-55~150

TO 220F

Tube

Halogen Free

Electrical Characteristics (Ta =25

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

500

-

-

V

Gate Threshold Voltage

3.0

-

5.0

Drain Cut-Off Current

-

-

1

µA

Gate Leakage Current

-

-

100

nA

Drain-Source ON Resistance

2.1

2.5

Forward Transconductance

-

4.8

-

S

Dynamic Characteristics

Total Gate Charge

(3)

-

6.75

nC

Gate-Source Charge

-

2

Gate-Drain Charge

-

2.6

Input Capacitance

-

285

pF

Reverse Transfer Capacitance

-

1.6

Output Capacitance

-

25

Turn-On

Delay Time

(3)

-

9.0

ns

Rise Time

-

19.2

Turn-Off Delay Time

-

14.6

Fall Time

-

9.6

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to Source

Diode Forward Current

-

2.8

-

A

Source-Drain Diode Forward

Voltage

-

1.4

V

Body Diode Reverse Recovery

Time

(3)

-

190

ns

Body Diode Reverse Recovery

Charge

-

0.9

µC

Note :

1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3.

4. L=40mH,