поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

IRFE420 датащи(PDF) 2 Page - International Rectifier

номер детали IRFE420
подробное описание детали  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRFE420 датащи(HTML) 2 Page - International Rectifier

  IRFE420 Datasheet HTML 1Page - International Rectifier IRFE420 Datasheet HTML 2Page - International Rectifier IRFE420 Datasheet HTML 3Page - International Rectifier IRFE420 Datasheet HTML 4Page - International Rectifier IRFE420 Datasheet HTML 5Page - International Rectifier IRFE420 Datasheet HTML 6Page - International Rectifier IRFE420 Datasheet HTML 7Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
IRFE420
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
R thJC
Junction to Case
—
—
9.1
RthJ-PCB
Junction to PC Board
—
—
26"""
Soldered to a copper clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
—
1.4
ISM
Pulse Source Current (Body Diode) ➀
—
—
5.6
VSD
Diode Forward Voltage
—
—
1.2
V
Tj = 25°C, IS = 1.4A, VGS = 0V ➃
trr
Reverse Recovery Time
—
—
9 0 0
nS
Tj = 25°C, IF = 1.4A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
—
—
5.9
µc
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
500
—
—
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
—
0.43
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
—
0.30
VGS = 10V, ID = 0.90A➃
Resistance
—
—
3.45
VGS =10V, ID =1.4A ➃
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
1.0
—
—
S ( )
VDS > 15V, IDS =0.90A➃
IDSS
Zero Gate Voltage Drain Current
—
—
2 5
VDS=400V, VGS=0V
—
—
250
VDS =400V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
—
1 0 0
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
—
-100
VGS = -20V
Qg
Total Gate Charge
—
—
16.7
VGS =10V, ID= 1.4A
Qgs
Gate-to-Source Charge
—
—
3.0
nC
VDS =250V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
—
8.7
td(on)
Turn-On Delay Time
—
—
4 0
VDD =250V, ID =1.4A,
t r
Rise Time
—
—
3 0
RG =7.5Ω
td(off)
Turn-Off Delay Time
—
—
6 0
tf
Fall Time
—
—
3 0
LS + LD
Total Inductance
—
6.1
—
Ciss
Input Capacitance
—
3 5 0
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
8 0
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
3 5
—
nA
nH
ns
µA
Ω
Measured from the center of
drain pad to center of source
pad



Html Pages

1 2 3 4 5 6 7


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com