MDD1503 datasheet(2/6 Pages) MGCHIP

2 / 6 page

Oct. 2015. Version 1.3

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

Quantity

Rohs Status

MDD1503RH

-55~150

D-PAK

Tape & Reel

3000 units

Halogen Free

Electrical Characteristics (TJ =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.3

1.9

2.7

Drain Cut-Off Current

IDSS

VDS = 30V, VGS = 0V

μA

TJ=55

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 22A

4.1

4.7

mΩ

TJ=125

5.9

6.8

VGS = 4.5V, ID = 18A

5.7

6.8

Forward Transconductance

gfs

VDS = 5V, ID = 10A

Dynamic Characteristics

Total Gate Charge

Qg(10V)

VDS = 15.0V, ID = 22A,

VGS = 10V

Total Gate Charge

Qg(4.5V)

13.3

16.6

Gate-Source Charge

Qgs

5.9

Gate-Drain Charge

Qgd

4.2

Input Capacitance

Ciss

VDS = 15.0V, VGS = 0V,

f = 1.0MHz

1349

1799

2249

Reverse Transfer Capacitance

Crss

132

177

221

Output Capacitance

Coss

266

354

443

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 15.0V,

ID = 22A , RG = 3.0Ω

Rise Time

12.7

Turn-Off Delay Time

td(off)

30.6

Fall Time

9.2

Gate Resistance

f=1 MHz

1.2

2.0

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 22A, VGS = 0V

0.84

1.1

Body Diode Reverse Recovery Time

trr

IF = 22A, dl/dt = 100A/μs

27.1

40.7

Body Diode Reverse Recovery Charge

Qrr

20.6

30.9

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 30.0A, VDD = 27V, VGS = 10V.

3. T < 10sec.

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