MDD1502RH datasheet(2/6 Pages) MGCHIP

2 / 6 page

May. 2011. Version 1.2

MagnaChip Semiconductor Ltd

Ordering Information

Part Number

Temp. Range

Package

Packing

Quantity

Rohs Status

MDD1502RH

-55~150

D-PAK

Tape & Reel

3000 units

Halogen Free

Electrical Characteristics (TJ =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

1.6

2.0

2.7

Drain Cut-Off Current

IDSS

VDS = 30V, VGS = 0V

µA

TJ=55

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 16A

7.4

8.5

TJ=125

10.7

12.3

VGS = 4.5V, ID = 13A

10.8

13.0

Forward Transconductance

gfs

VDS = 5V, ID = 10A

Dynamic Characteristics

Total Gate Charge

Qg(10V)

VDS = 15.0V, ID = 16A,

VGS = 10V

10.7

14.3

17.9

Total Gate Charge

Qg(4.5V)

5.0

6.7

8.4

Gate-Source Charge

Qgs

2.6

Gate-Drain Charge

Qgd

2.3

Input Capacitance

Ciss

VDS = 15.0V, VGS = 0V,

f = 1.0MHz

696

928

1160

Reverse Transfer Capacitance

Crss

113

Output Capacitance

Coss

132

176

220

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 15.0V,

ID = 16A , RG = 3.0

7.2

Rise Time

12.0

Turn-Off Delay Time

td(off)

22.8

Fall Time

8.1

Gate Resistance

f=1 MHz

3.5

5.0

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 16A, VGS = 0V

0.8

1.1

Body Diode Reverse Recovery Time

trr

IF = 16A, dl/dt = 100A/µs

20.4

30.6

Body Diode Reverse Recovery Charge

Qrr

11.9

17.9

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 17.0A, VDD = 27V, VGS = 10V.

3. T < 10sec.

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