Philips Semiconductors

Product data

CBT16211

24-bit bus switch with 12-bit output enables

2001 Jun 13

4

SYMBOL

PARAMETER

CONDITIONS

RATING

UNIT

DC supply voltage

–0.5 to +7.0

V

DC input diode current

–50

mA

–0.5 to +7.0

V

output in Off or High state

–0.5 to +5.5

V

DC output current

output in Low state

128

mA

Storage temperature range

–65 to 150

°C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the

device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability.

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction

temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150

°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

LIMITS

UNIT

SYMBOL

PARAMETER

Min

Max

UNIT

DC supply voltage

4.5

5.5

V

High-level input voltage

2.0

—

V

Low-level Input voltage

—

0.8

V

Operating free-air temperature range

–40

+85

°C

DC ELECTRICAL CHARACTERISTICS

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

UNIT

Min

Max

Input clamp voltage

—

—

–1.2

V

Output high pass voltage

3.4

3.6

3.9

V

I

Input leakage current

—

—

10

µA

Input leakage current

—

—

±1

µA

Quiescent supply current

—

—

3

µA

Additional supply current per

—

—

2.5

mA

Control pins

—

4.5

—

pF

Port OFF capacitance

—

6.9

—

pF

3

—

14

20

—

5

7

Ω

—

5

7

Ω

—

8

12

NOTES:

3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch.

On-state resistance is determined by the lowest voltage of the two (A or B) terminals.