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CAT660ESA датащи(PDF) 3 Page - Catalyst Semiconductor

номер детали CAT660ESA
подробное описание детали  100mA CMOS Charge Pump Inverter/Doubler
PDF  16 Pages
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производитель  CATALYST [Catalyst Semiconductor]
домашняя страница  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT660ESA датащи(HTML) 3 Page - Catalyst Semiconductor

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CAT660
3
Doc. No. 5000, Rev. U
ABSOLUTE MAXIMUM RATINGS
V+ to GND ............................................................. 6V
Input Voltage (Pins 1, 6 and 7) .. -0.3V to (V+ + 0.3V)
BOOST/FC and OSC Input Voltage ........... The least
negative of (Out - 0.3V) or (V+ - 6V) to (V+ + 0.3V)
Output Short-circuit Duration to GND .............. 1 sec.
(OUT may be shorted to GND for 1 sec without damage but
shorting OUT to V+ should be avoided.)
Continuous Power Dissipation (TA = 70
°C)
Plastic DIP ................................................ 730mW
SOIC ......................................................... 500mW
TDFN ............................................................... 1W
Operating Ambient Temperature Range
CAT660E .............. -40
°C to 85°C
Storage Temperature ......................... -65
°C to 160°C
Lead Soldering Temperature (10 sec) ............. 300
°C
Note: TA = Ambient Temperature
These are stress ratings only and functional operation is not
implied. Exposure to absolute maximum ratings for prolongued
time periods may affect device reliability. All voltages are with
respect to ground.
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Inverter: LV = Open. RL = 1k
3.0
5.5
V
Supply Voltage
VS
Inverter: LV = GND. RL = 1k
1.5
5.5
Doubler: LV = OUT. RL = 1k
2.5
5.5
Supply Current
IS
BOOST/FC = open, LV = Open
0.09
0.5
mA
BOOST/FC = V+ , LV = Open
0.3
3
Output Current
IOUT
OUT is more negative than -4V
100
mA
Output Resistance
RO
IL = 100mA, C1 = C2 = 150
µF (Note 2)
4
7
BOOST/FC = V+ (C1, C2 ESR
≤ 0.5Ω)
IL = 100mA, C1 = C2 = 10
µF12
Oscillator Frequency FOSC
BOOST/FC = Open
5
10
kHz
(Note 3)
BOOST/FC = V+
40
80
OSC Input Current
IOSC
BOOST/FC = Open
±1
µA
BOOST/FC = V+
±5
Power Efficiency
PE
RL = 1k
Ω connected between V+ and
96
98
%
OUT, TA = 25
°C (Doubler)
RL = 500
Ω connected between GND and
92
96
OUT, TA = 25
°C (Inverter)
IL = 100mA to GND, TA = 25
°C (Inverter)
88
Voltage Conversion
VEFF
No load, TA = 25
°C
99
99.9
%
Efficiency
Note 1. In Figure 1, test circuit capacitors C1 and C2 are 150
µF and have 0.2Ω maximum ESR. Higher ESR levels may reduce efficiency and output
voltage.
Note 2. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and efficiency
keep external capacitor ESR under 0.2
Ω.
Note 3. FOSC is tested with COSC = 100pF to minimize test fixture loading. The test is correlated back to COSC=0pF to simulate the capacitance
at OSC when the device is inserted into a test socket without an external COSC.
ELECTRICAL CHARACTERISTICS
V+ = 5V, C1 = C2 = 150
µF, Boost/FC = Open, COSC = 0pF, inverter mode with test circuit as shown in Figure 1 unless
otherwise noted. Temperature is over operating ambient temperature range unless otherwise noted.



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