BULB128D datasheet(2/7 Pages) STMICROELECTRONICS

номер детали	BULB128D

подробное описание детали	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	7 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.78

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0 V)

VCE = 700 V

TC = 125

100

500

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 400 V

250

µA

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 10 mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

L = 25 mH

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.1 A

IC = 1 A

IB = 0.2 A

IC = 2.5 A

IB = 0.5 A

IC = 4 A

IB = 1 A

0.5

0.7

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.1 A

IC = 1 A

IB = 0.2 A

IC = 2.5 A

IB = 0.5 A

1.1

1.2

1.3

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 2 A

VCE = 5 V

Forward Voltage Drop

If = 2 A

2.5

INDUCTIVE LOAD

Storage Time

Fall Time

VCC = 200 V

IC = 2 A

IB1 = 0.4 A

VBE(off) = -5 V

RBB = 0

Ω

L = 200

µH

(see fig.1)

0.6

0.1

µs

RESISTIVE LOAD

Storage Time

Fall Time

VCC = 250 V

IC = 2 A

IB1 = 0.4 A

IB2 = -0.4 A

Tp = 300

µs

(see fig.2)

0.2

2.9

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BULB128D-1

2/7

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