APM4532 datasheet(2/13 Pages) ANPEC

номер детали	APM4532

подробное описание детали	Dual Enhancement Mode MOSFET (N-and P-Channel)

PDF	13 Pages

Scroll/Zoom	100%

производитель	ANPEC [Anpec Electronics Coropration]

домашняя страница	http://www.anpec.com.tw

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2 / 13 page

 ANPEC Electronics Corp.

Rev. A.1 - Sep., 2002

www.anpec.com.tw

APM4532

Symbol

Parameter

Test Condition

Min.

Typ. Max.

Unit

Static

N-Ch

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V , IDS=250

µA

P-Ch

-30

VDS=24V , VGS=0V

N-Ch

IDSS

Zero Gate Voltage Drain

Current

VDS=-24V , VGS=0V

P-Ch

-1

µA

VDS=VGS , IDS=250

µA

N-Ch

1.5

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=-250

µA

P-Ch

-1

-1.5

-2

N-Ch

±100

IGSS

Gate Leakage Current

VGS=

±25V , V

DS=0V

P-Ch

±100

VGS=10V , IDS=5A

VGS=4.5V , IDS=4A

N-Ch

VGS=-10V , IDS=-3.5A

RDS(ON)

Drain-Source On-state

Resistance

VGS=-4.5V , IDS=-2.5A

P-Ch

135

150

Ω

ISD=1.7A , VGS=0V

N-Ch

0.7

1.3

VSD

Diode Forward Voltage

ISD=-1.7A , VGS=0V

P-Ch

-0.7

-1.3

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Symbol

Parameter

N-Channel

P-Channel

Unit

VDSS

Drain-Source Voltage

-30

VGSS

Gate-Source Voltage

±25

Maximum Drain Current – Continuous

-3.5

IDM

Maximum Drain Current – Pulsed

-20

TA=25

°C

Maximum Power Dissipation

TA=100

°C

0.8

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to 150

°C

RθjA

Thermal Resistance – Junction to Ambient

62.5

°C/W

* Surface Mounted on FR4 Board, t

≤ 10 sec.

Notes

a : Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%

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