STM32F401CDU6 datasheet(71/135 Pages) STMICROELECTRONICS

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STM32F401xD STM32F401xE

Electrical characteristics

114

Figure 21. Typical VBAT current consumption (LSE and RTC ON)

I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.

I/O static current consumption

All the I/Os used as inputs with pull-up generate current consumption when the pin is

externally held low. The value of this current consumption can be simply computed by using

the pull-up/pull-down resistors values given in Table 54: I/O static characteristics.

For the output pins, any external pull-down or external load must also be considered to

estimate the current consumption.

Additional I/O current consumption is due to I/Os configured as inputs if an intermediate

voltage level is externally applied. This current consumption is caused by the input Schmitt

trigger circuits used to discriminate the input value. Unless this specific configuration is

Table 31. Typical and maximum current consumptions in VBAT mode

Symbol

Parameter

Conditions(1)

Typ

Max(2)

Unit

TA = 25 °C

TA =

85 °C

TA =

105 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT =

3.3 V

VBAT = 3.6 V

IDD_VBAT

Backup

domain supply

current

Low-speed oscillator (LSE) and RTC ON

0.66

0.76

0.97

3.0

5.0

µA

RTC and LSE OFF

0.1

2.0

4.0

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization, not tested in production.

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