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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F401CD датащи(PDF) 80 Page - STMicroelectronics |
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STM32F401CD датащи(HTML) 80 Page - STMicroelectronics |
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80 / 135 page  Electrical characteristics STM32F401xD STM32F401xE 80/135 Figure 25. Typical application with a 32.768 kHz crystal 6.3.9 Internal clock source characteristics The parameters given in Table 39 and Table 40 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 14. High-speed internal (HSI) RC oscillator L Table 39. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 16 - MHz ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 2. Guaranteed by design, not tested in production -- 1 % Factory- calibrated TA = –40 to 105 °C(3) 3. Guaranteed by characterization, not tested in production –8 - 4.5 % TA = –10 to 85 °C(3) –4 - 4 % TA = 25 °C –1 - 1 % tsu(HSI)(2) HSI oscillator startup time -2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption -60 80 µA |
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