STM32F398VE datasheet(110/151 Pages) STMICROELECTRONICS

110 / 151 page

Electrical characteristics

STM32F398VE

110/151

DocID027227 Rev 2

Pre qualification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

6.3.12

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Table 58. EMI characteristics

Symbol

Parameter

Conditions

Monitored

frequency band

Max vs. [fHSE/fHCLK]

Unit

8/72 MHz

SEMI

Peak level

VDD 1.9 V, TA 25 °C,

LQFP100 package



compliant with IEC

61967-2

0.1 to 30 MHz

dBµV

30 to 130 MHz

130 MHz to 1GHz

SAE EMI Level

Table 59. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

1. Data based on characterization results, not tested in production.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA +25 °C, conforming

to ANSI/JEDEC JS-001

22000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA +25 °C, conforming

to ANSI/ESD STM5.3.1

250

STM32F398VE датащи(PDF) 110 Page - STMicroelectronics

STM32F398VE датащи(HTML) 110 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

датащи скачать

ссылки URL