STM32F328C8 datasheet(50/109 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F328C8

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DocID026351 Rev 3

6.3.3

Embedded reference voltage

The parameters given in Table 20 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 18.

6.3.4

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 9: Current consumption

measurement scheme.

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to CoreMark code.

Note:

The total current consumption is the sum of IDD and IDDA.

Table 20. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

VREFINT

Internal reference voltage

–40 °C < TA < +105 °C 1.16

1.2

1.25

–40 °C < TA < +85 °C 1.16

1.2

1.24(1)

1. Data based on characterization results, not tested in production.

TS_vrefint

ADC sampling time when

reading the internal

reference voltage

-2.2

µs

VRERINT

Internal reference voltage

spread over the

temperature range

VDD = 31.8 V ±10 mV

10(2)

2. Guaranteed by design, not tested in production.

TCoeff

Temperature coefficient

100(2) ppm/°C

TREFINT_RDY(3)

3. Guaranteed by design, not tested in production. Latency between the time when pin NPOR is set to 1 by

the application and the time when VREFINTRDYF is set to 1 by the hardware.

Internal reference voltage

temporization

-1.5

2.5

4.5

Table 21. Internal reference voltage calibration values

Calibration value name

Description

Memory address

VREFINT_CAL

Raw data acquired at

temperature of 30 °C

VDDA= 3.3 V

0x1FFF F7BA - 0x1FFF F7BB

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