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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8S005C6 датащи(PDF) 60 Page - STMicroelectronics |
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STM8S005C6 датащи(HTML) 60 Page - STMicroelectronics |
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60 / 97 page  Electrical characteristics STM8S005C6 STM8S005K6 60/97 DocID022186 Rev 4 9.3.4 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. fHSE High speed internal RC oscillator (HSI) Figure 19. Typical HSI frequency variation vs VDD at 3 temperatures Table 32. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI Accuracy of HSI oscillator Trimmed by the CLK_HSITRIMR register for given VDD and TA conditions(1) 1. See the application note. -- 1.0(2) % Accuracy of HSI oscillator (factory calibrated) VDD = 5 V, TA = 25 °C - 5 - VDD 5 V, -40 °C T A 85 °C -5 - 5 tsu(HSI) HSI oscillator wakeup time including calibration - - - 1.0(2) 2. Guaranteed by design, not tested in production. µs IDD(HSI) HSI oscillator power consumption - - 170 250(3) 3. Data based on characterization results, not tested in production µA |
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